Estimations of Low Temperature Dislocation Mobility in GaN. Issue 17 (28th May 2019)

• Record Type: Journal Article
• Authors: Orlov, Valeri I.; Vergeles, Pavel S.; Yakimov, Eugene B.; Li, Xingji; Yang, Jianqun; Lv, Gang; Dong, Shangli
• Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-28
• Subjects: activation energy -- dislocation mobility -- GaN -- indentation; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900163
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV. Abstract : The activation energy of dislocation mobility in GaN is estimated from the measurements of traveling distances of dislocations gliding in pyramidal planes in the temperature range from 300 to 773 K. Its value is obtained to be equal to 650 ± 230 meV.