Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species. Issue 17 (12th August 2019)
- Record Type:
- Journal Article
- Title:
- Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species. Issue 17 (12th August 2019)
- Main Title:
- Application of the Concept of Lifetime‐Equivalent Defect Density in Defect Systems Comprising a Multitude of Defect Species
- Authors:
- Herguth, Axel
- Other Names:
- Kissinger Gudrun guestEditor.
Kot Dawid guestEditor.
Richter Hans guestEditor.
Zöllner Marvin guestEditor. - Abstract:
- Abstract : The specific injection dependence of either excess carrier lifetime or lifetime‐equivalent defect density generally allows for the identification of a single defect species and the analysis of its properties. However, the presence of a multitude of defect species noticeably complicates this endeavor. A temporally different activation/deactivation dynamic of different defect species, as encountered in the context of light‐induced degradation phenomena in crystalline silicon solar cells, in combination with the distinct injection dependence of specific defect species can help to distinguish the involved defect species. Within this simulation‐based contribution, it is shown how injection‐dependent information can be used to reveal the presence of a second defect species in the context of light‐induced degradation and to distinguish clearly whether the formation of deep‐level defects in the bulk or a deterioration in the surface passivation quality is responsible for an observed degradation of effective excess carrier lifetime. Abstract : The specific impact of different defect species in crystalline silicon on the injection‐dependent excess carrier lifetime is used to identify defect species and analyze their properties. Especially, the lifetime‐equivalent defect density as a measure of the actual defect density helps to distinguish different defect species encountered during light‐induced degradation phenomena.
- Is Part Of:
- Physica status solidi. Volume 216:Issue 17(2019)
- Journal:
- Physica status solidi
- Issue:
- Volume 216:Issue 17(2019)
- Issue Display:
- Volume 216, Issue 17 (2019)
- Year:
- 2019
- Volume:
- 216
- Issue:
- 17
- Issue Sort Value:
- 2019-0216-0017-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2019-08-12
- Subjects:
- crystalline silicon -- defect analysis -- defect densities -- lifetime -- light-induced degradation
Solid state physics -- Periodicals
Solids -- Industrial applications -- Periodicals
530.41 - Journal URLs:
- http://onlinelibrary.wiley.com/ ↗
- DOI:
- 10.1002/pssa.201900322 ↗
- Languages:
- English
- ISSNs:
- 1862-6300
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 6475.210000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 14181.xml