Dissociation and Formation Kinetics of Iron–Boron Pairs in Silicon after Phosphorus Implantation Gettering. Issue 17 (14th August 2019) - Khelifati, Nabil
Abstract : Herein, the results of a systematic study on the kinetics of dissociation and formation of iron–boron (FeB) pairs in boron‐doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures are reported. The aim herein is threefold: 1) investigation of the dissociation kinetics of the FeB pairs by standardized illumination as a function of iron concentration after the gettering process; 2) study of the kinetics of their association; and 3) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels. Abstract : Behavior of iron–boron (FeB) pairs in boron‐doped Czochralski silicon after extended gettering by phosphorus implantation at different temperatures is studied. The kinetic parameters of the light‐induced dissociation of iron–boron pairs under standardized illumination, i.e., 1 and 0.5 sun, as well as the characteristics of their formation in the dark, are determined.