Separation of Individual Thermal Double‐Donor Levels by Laplace Deep‐Level Transient Spectroscopy. Issue 17 (8th July 2019)

• Record Type: Journal Article
• Authors: Gwozdz, Katarzyna; Kolkovsky, Vladimir; Weber, Joerg
• Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-07-08
• Subjects: defects -- Laplace deep-level transient spectroscopy -- negative-U system -- silicon -- thermal double donors; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900302
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Thermal double donors (TDDs) are created by heat treatment of Czochralski‐grown Si at temperatures around 450 °C. A family of individual defects with very similar donor (TDDn 0/+ with n = 0–16) and double‐donor (TDDn +/++ ) levels is known today. The close‐level positions of the individual TDDs result in broad and asymmetric deep‐level transient spectroscopy (DLTS) peaks. Herein, Laplace DLTS are used to study this asymmetry. Several well‐separated Laplace DLTS peaks are resolved in our samples. Metastable properties of the TDDs are taken as advantages to identify the double‐donor levels (++/+) of TDD0, TDD1, and TDD2. Abstract : Heating of silicon with high oxygen concentrations at around 450 °C generates thermal double donors (TDD). The energy levels up to 17 donors are very similar, which makes it impossible to separate the single species by deep level transient spectroscopy (DLTS) measurements. Using high‐resolution Laplace DLTS, the first three TDDs are resolved, and their properties are determined.