Device Performance as a Metrology Tool to Detect Metals in Silicon. Issue 17 (8th August 2019)

• Record Type: Journal Article
• Authors: Claeys, Cor; Simoen, Eddy
• Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-08-08
• Subjects: complementary metal‐oxide‐semiconductor (CMOS) imagers -- diode analysis -- functional density theory -- low-frequency noise -- metal-oxide-semiconductor capacitors -- solar cell efficiencies -- transition metals; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900126
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Herein, the impact of transition metals (TMs) on the electrical device performance, i.e., carrier lifetime, leakage current, low‐frequency noise, photocurrent, and solar cell efficiency is reviewed. Defect information is obtained by using either simple device structures such as metal‐oxide‐semiconductor (MOS) capacitors and pn‐diodes or transistors. The impact of metals on complementary MOS (CMOS) image sensors (CIS) and solar cells is also briefly addressed. Scaled devices are a power tool to detect small‐sized defect clusters or even single metal atoms. Examples are given for a variety of both slow‐ and fast‐diffusing metals. The final section outlines the power of density functional theory (DFT) ab initio calculations to support the experimental observations and to get a deeper physical insight into the defect structure. Abstract : Transition metals strongly impact the electrical device performance, i.e., carrier lifetime, leakage current, low‐frequency noise, photocurrent, and solar cell efficiency. CMOS image sensors (CIS) and solar cells are also degraded by metal contamination. Density functional theory (DFT) ab initio calculations are frequently used to get a deeper physical insight in the defect structure. These different aspects are briefly reviewed.