Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem. Issue 17 (12th August 2019)

• Record Type: Journal Article
• Authors: Markevich, Vladimir P.; Vaqueiro-Contreras, Michelle; De Guzman, Joyce T.; Coutinho, José; Santos, Paulo; Crowe, Iain F.; Halsall, Matthew P.; Hawkins, Ian; Lastovskii, Stanislau B.; Murin, Leonid I.; Peaker, Anthony R.
• Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-08-12
• Subjects: boron–oxygen defects -- light-induced degradation -- persistent photoconductivity -- recombination enhanced reactions -- silicon; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900315
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Results available in the literature on minority carrier trapping and light‐induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with "deep" electron traps (J. A. Hornbeck and J. R. Haynes, Phys. Rev . 1955, 97, 311) and the recently reported results that have linked LID with the transformation of a defect consisting of a substitutional boron atom and an oxygen dimer (Bs O2 ) from a configuration with a deep donor state into a recombination active configuration associated with a shallow acceptor state (M. Vaqueiro‐Contreras et al., J. Appl. Phys . 2019, 125, 185704). It is shown that the Bs O2 complex is a defect with negative‐ U properties, and it is responsible for minority carrier trapping and persistent photoconductivity in nondegraded Si:B+O samples and solar cells. It is argued that the "deep" electron traps observed by Hornbeck and Haynes are the precursors of the "slow" forming shallow acceptor defects, which are responsible for the dominant LID in boron‐doped Czochralski silicon (Cz‐Si) crystals. Both the deep and shallow defects are Bs O2 complexes, transformations between charge states and atomic configurations of which account for the observed electron trapping and LID phenomena. Abstract : Experimental results on the electronic and dynamic properties of a defect consisting of a substitutional boron atom and an oxygen dimer (Bs O2 ) in silicon are presented. It is shown that the Bs O2 complex is a defect with negative‐ U properties, and it is responsible for persistent photoconductivity and light‐induced degradation of efficiency of solar cells produced from Si:B+O crystals.