Electrically Active Copper–Nickel Complexes in p‐Type Silicon. Issue 17 (4th June 2019)

• Record Type: Journal Article
• Authors: Yarykin, Nikolai; Weber, Jörg
• Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 17(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-06-04
• Subjects: complex -- copper -- deep levels -- nickel -- silicon; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201900304
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : The interaction of substitutional copper atoms (Cu s ) with interstitial nickel (Ni i ) or copper (Cu i ) in crystalline p‐type Si is investigated by DLTS. The mobile interstitial species are introduced at near‐room temperatures by etching in Ni‐ or Cu‐contaminated KOH aqueous solutions. The Cu i in‐diffusion is confirmed by the formation of several deep level complexes including the photoluminescence CuPL center which is known to be a Cu s atom decorated with three Cu i species. The Ni i in‐diffusion results in the appearance of three novel electrically active Cu‐Ni complexes; two of them are unstable at room temperature and transform into the third center which possesses a level at 0.16 eV above the top of the valence band. The deep‐level depth profiles below the etched surface affirm that all three Cu‐Ni complexes are formed on the base of one Cu s atom by means of addition at least one Ni i and one or more Cu i species. Abstract : The interaction of highly mobile transition metal ions with substitutional impurities in Si at around room temperatures is of major concern in device technology. The fundamental aspect of this work is related to the question of how precipitate formation starts. The binding of fast diffusing Ni and Cu interstitials with substitutional Cu in Si is chosen to learn about the defect reactions.