Electrochemistry of Layered Semiconducting AIIIBVI Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe). Issue 11 (6th May 2019)
- Record Type:
- Journal Article
- Title:
- Electrochemistry of Layered Semiconducting AIIIBVI Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe). Issue 11 (6th May 2019)
- Main Title:
- Electrochemistry of Layered Semiconducting AIIIBVI Chalcogenides: Indium Monochalcogenides (InS, InSe, InTe)
- Authors:
- Wang, Yong
Szökölová, Katerina
Nasir, Muhammad Zafir Mohamad
Sofer, Zdenek
Pumera, Martin - Abstract:
- Abstract: Layered A III B VI chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered A III B VI chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at −1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)6 ] 3−/4− redox probe using cyclic voltammetry ( vs . Ag/AgCl) at the scan rate of 100 mV s −1 . It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest k o b s 0 obtained (3.7×10 −3 cm s −1 ). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of −10 mA cm −2 . However, the performances of indiumAbstract: Layered A III B VI chalcogenides represent an interesting class semiconductors, where most of adopting 2D structures. Unlike the typical sandwiched structure of transition metal dichalcogenides (TMDs), layered A III B VI chalcogenides like InSe and GaSe are composed of X−M−M−X motif where M is gallium/indium and X is sulfur/selenium/tellurium. The exception is InS, which adopt an orthorhombic 3D structure. Herein, we studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution (HER), oxygen evolution (OER) and oxygen reduction reaction (ORR) of indium monochalcogenides (InS, InSe and InTe). Inherent electrochemistry studies in phosphate buffered saline electrolyte showed that InS did not exhibit any inherent electrochemical signals when compared to bare glassy carbon electrode. However, InSe showed a reduction peak at −1.6 V while InTe had an oxidation peak at 0.2 V. The heterogeneous electron transfer (HET) rates of indium monochalcogenides were measured with [Fe(CN)6 ] 3−/4− redox probe using cyclic voltammetry ( vs . Ag/AgCl) at the scan rate of 100 mV s −1 . It was found that InTe exhibited the best electrochemical performance with the fastest HET rate with highest k o b s 0 obtained (3.7×10 −3 cm s −1 ). InS showed the best electrocatalytic performance for HER with the lowest overpotential value of 0.92 V at current density of −10 mA cm −2 . However, the performances of indium monochalcogenides were almost comparable to that of bare glassy carbon electrode and do not exhibit any improvements in electrocatalytic capabilities. This study provides insights into the electrochemical properties and electrocatalytic performances of layered A III B VI indium monochalcogenides which would influence potential applications. Abstract : Hot property ! We studied and compared the inherent electrochemical properties as well as the electrocatalytic performances towards hydrogen evolution, oxygen evolution and oxygen reduction reaction of indium monochalcogenides (InS, InSe and InTe). … (more)
- Is Part Of:
- ChemCatChem. Volume 11:Issue 11(2019)
- Journal:
- ChemCatChem
- Issue:
- Volume 11:Issue 11(2019)
- Issue Display:
- Volume 11, Issue 11 (2019)
- Year:
- 2019
- Volume:
- 11
- Issue:
- 11
- Issue Sort Value:
- 2019-0011-0011-0000
- Page Start:
- 2634
- Page End:
- 2642
- Publication Date:
- 2019-05-06
- Subjects:
- Indium monochalcogenides -- layered materials -- electrochemistry -- electrocatalysts -- hydrogen generation
Catalysis -- Periodicals
541.39505 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1867-3899 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/cctc.201900449 ↗
- Languages:
- English
- ISSNs:
- 1867-3880
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 14169.xml