Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time. (9th December 2019)

• Record Type: Journal Article
• Authors: Li, Yangfeng; Jin, Zijing; Han, Yu; Zhao, Chunyu; Huang, Jie; Tang, Chak Wah; Wang, Jiannong; Lau, Kei May
• Is Part Of: Materials research express. Volume 7:Number 1(2020)
• Publication Date: 2019-12-09
• Subjects: InGaN QDs -- AFM -- TDPL -- excitation power-dependent PL -- TEM; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab5be0
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The effect of different growth interruption time on the surface morphology and optical properties of InGaN quantum dots (QDs) grown on 2-inch silicon substrates is investigated. The surface becomes rougher and the photoluminescence intensity has been enhanced significantly when employing the growth interruption method. Temperature-dependent photoluminescence and excitation power-dependent photoluminescence both present unchanged peak energy and line-width of QDs. The sharp increase of PL intensity in medium temperature regime is attributed to the fingerprint of the existence of InGaN QDs. The shape of the QDs are further confirmed by the transmission electron microscopy with a size of 3 nm by 4 nm. Among the samples, a growth interruption time of 30 s gives the best optical performance.