Mechanisms of copper protrusion in through-silicon-via structures at the nanoscale. (19th November 2018)

• Record Type: Journal Article
• Authors: Liu, Jinxin; Huang, Zhiheng; Zhang, Yong; Conway, Paul P.
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 1(2019)
• Publication Date: 2018-11-19
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/aae898
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Thermal stress-induced copper protrusion is frequently observed in through-silicon-vias (TSVs) based three-dimensional system integration. In this study, the detailed process of Cu protrusion is reproduced on the atomic scale using a two-mode phase-field-crystal (PFC) model, and the mechanisms of protrusion are identified. To simulate thermal loading, a "penalty term" is added to the governing equation of the PFC model. The application of loading on the TSVs induces copper grain deformation and grain boundary (GB) migration at the nanoscale. Furthermore, the simulation results suggest that the Cu protrusion is resulted from diffusional creep, involving both Nabarro–Herring creep and Coble creep. The obtained power index of diffusional creep p is around 2.16, suggesting that lattice diffusion contributes more to protrusion than GB diffusion does. The protrusion height in micron-scale TSVs predicted by extrapolating the relationship between the protrusion height and diameter of nanoscale TSVs agrees with the experimental data.