Fabrication of GaOx based crossbar array memristive devices and their resistive switching properties. (12th May 2020)

• Record Type: Journal Article
• Authors: Joko, Mamoru; Hayashi, Yusuke; Tohei, Tetsuya; Sakai, Akira
• Is Part Of: Japanese journal of applied physics. Volume 59:Number SM(2020)
• Publication Date: 2020-05-12
• Subjects: memristor -- crossbar -- GaOamp -- amp -- lt -- iamp -- amp -- gt -- amp -- amp -- lt -- subamp -- amp -- gt -- xamp -- amp -- lt -- /subamp -- amp -- gt -- amp -- amp -- lt -- /iamp -- amp -- gt -- gallium oxide -- artificial neural network -- STDP -- synapse; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ab8be6
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Memristive devices attract much attention for the application to neuromorphic computing. Here we focus on amorphous GaO x based memristive devices and their integration as a crossbar architecture which is mandatory to improve parallelism in computing and essential to future power-saving, high-speed and reliable artificial neural networks (ANN). Fabricated Pt/GaO x /ITO crossbar array memristive devices with 3 × 3 μ m 2 crosspoints exhibit non-filamentary reversible bipolar resistive switching (RS) without any electroforming processes. We demonstrate the gradual resistance change by repeating voltage sweep and applying pulse voltages. The expression of spike-timing-dependent plasticity property, one of synaptic functions in neuromorphic devices, is also successful in the present device. The obtained results strongly suggest that the drift of oxygen vacancies in GaO x plays an important role in the RS behavior and the GaO x based crossbar array memristive devices have a great potential for hardware implementation of ANN.