Studies on transient characteristics of unipolar resistive switching processes in TiO2 thin film grown by atomic layer deposition. (30th April 2018)

• Record Type: Journal Article
• Authors: Sahu, Vikas Kumar; Das, Amit K; Ajimsha, R S; Misra, P
• Is Part Of: Journal of physics. Volume 51:Number 21(2018)
• Publication Date: 2018-04-30
• Subjects: resistive switching memory -- switching time -- TiO2 thin film -- atomic layer deposition; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aabc84
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The transient characteristics of resistive switching processes have been investigated in TiO2 thin films grown by atomic layer deposition (ALD) to study the temporal evolution of the switching processes and measure the switching times. The reset and set switching times of unipolar Au/TiO2 /Pt devices were found to be ~250 µ s and 180 ns, respectively in the voltage windows of 0.5–0.9 V for reset and 1.9–4.8 V for set switching processes, obtained from quasi-static measurements. The reset switching time decreased exponentially with increasing amplitude of applied reset voltage pulse, while the set switching time remained insensitive to the amplitude of the set voltage pulse. A fast reset process with a switching time of ~400 ns was achieved by applying a reset voltage of ~1.8 V, higher than that of the quasi-static reset voltage window but below the set voltage window. The sluggish reset process in TiO2 thin film and the dependence of the reset switching time on the amplitude of the applied voltage pulse was understood on the basis of a self-accelerated thermal dissolution model of conducting filaments (CFs), where a higher temperature of the CFs owing to enhanced Joule heating at a higher applied voltage imposes faster diffusion of oxygen vacancies, resulting in a shorter reset switching time. Our results clearly indicate that fast resistive switching with switching times in hundreds of nanoseconds can be achieved in ALD-grown TiO2 thin films. This may find applications in fast non-volatile unipolar resistive switching memories.