Effect of graphene on improved photosensitivity of MoS2-graphene composite based Schottky diode. (October 2019)

• Record Type: Journal Article
• Authors: Halder, Soumi; Pal, Baishakhi; Dey, Arka; Sil, Sayantan; Das, Pubali; Biswas, Animesh; Ray, Partha Pratim
• Is Part Of: Materials research bulletin. Volume 118(2019)
• Publication Date: 2019-10
• Subjects: Schottky barrier diode -- MoS2 -- Current density-voltage -- Photosensitivity -- Charge transport phenomena; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2019.110507
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: MoS2 and MoS2 -Graphene (MGC) composite have been synthesized by hydrothermal process. Electrical properties of Al/MoS2 /ITO and Al/MGC/ITO Schottky diode were studied by conventional current-voltage measurement. The photosensitivity of composite based diode increased by almost 33 times compared to pure MoS2 based diode. The charge transport mechanism of Schottky barrier diode was discussed by employing space charge limited current (SCLC) theory. Abstract: In this work, MoS2 and MoS2 -Graphene (MGC) composite have been synthesized by hydrothermal process followed by their structural, optical and electrical characterization. The current density-voltage measurements have been performed at room temperature by fabricating Al/MoS2 and/or MGC/ITO configured sandwich structured metal-semiconductor (MS) thin film Schottky devices. Under light and dark conditions, various parameters of our synthesized material based devices like rectification ratio, series resistance, barrier height, etc. have been measured and compared between the two. All the measured electrical properties show improvement for the composite based diodes, noteworthy the photosensitivity which has been increased by almost 33 times, signifying its potential application in photosensitive devices.