Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding. (17th April 2018)

• Record Type: Journal Article
• Authors: Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.
• Is Part Of: Japanese journal of applied physics. Volume 57:Number 5(2018)
• Publication Date: 2018-04-17
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.57.051002
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2 /Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.