High-quality electrical transport using scalable CVD graphene. (17th August 2020)

• Record Type: Journal Article
• Authors: Pezzini, Sergio; Mišeikis, Vaidotas; Pace, Simona; Rossella, Francesco; Watanabe, Kenji; Taniguchi, Takashi; Coletti, Camilla
• Is Part Of: 2D materials. Volume 7:Number 4(2020)
• Publication Date: 2020-08-17
• Subjects: CVD graphene -- hBN encapsulation -- ultra-high mobility -- quantum Hall effect; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/aba645
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. Hexagonal boron nitride is used to encapsulate the graphene crystals—without taking part to their detachment from the growth catalyst—and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to ∼ 1.3 × 10 5 cm 2 V −1 s −1 at ∼ 10 11 cm −2 concentration. At T = 4.2 K, the mobility (>6 × 10 5 cm 2 V −1 s −1 at ∼ 10 11 cm −2 ) is limited by the devices' physical edges, and charge fluctuations < 7 × 10 9 cm −2 are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ( B ∼ 50 mT) and signatures of electronic correlation, including the fractional quantum Hall effect.