Effects of bulk-defects and metal/bulk interface anomalies in a forming-free double-barrier memristor. (30th August 2018)

• Record Type: Journal Article
• Authors: Kumar, Amitesh; Mukherjee, Shaibal; Kranti, Abhinav
• Is Part Of: Journal of physics. Volume 51:Number 40(2018)
• Publication Date: 2018-08-30
• Subjects: RRAM -- resistive memory -- memristor -- Schottky-like -- oxygen vacancy -- bulk defects -- interface anamolies; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aad96b
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: In this work, we report on a comprehensive study based on theoretical and experimental analysis to predict resistive switching in a metal-semiconductor-metal device. The impact of bulk defects (oxygen vacancies, non-lattice oxygen ions, trap charges) as bulk-limited conduction and interface anomalies (disorder-induced interface states, Schottky barrier formation/dissolution) as electrode-limited conduction for a resistive switch or memristor have been exhaustively studied. The distribution of bulk defects with applied bias which governs switching and the forming-free behavior of the device has been illustrated. Its role in the formation/dissolution of interfacial oxide is found to affect Schottky barrier considerably. The present work significantly contributes towards a further understanding and modeling of the conduction mechanisms for a wide range of resistive switches.