Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods. (31st August 2020)

• Record Type: Journal Article
• Authors: Reddeppa, Maddaka; Park, Byung-Guon; Majumder, Sutripto; Kim, Young Heon; Oh, Jae-Eung; Kim, Song-Gang; Kim, Dojin; Kim, Moon-Deock
• Is Part Of: Nanotechnology. Volume 31:Number 47(2020)
• Publication Date: 2020-08-31
• Subjects: InGaN/GaN SQW NRs -- optical properties -- photoelectrochemical properties -- defect passivation; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aba301
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. Due to the large number of surface states, III-nitride NRs suffer from low quantum efficiency. Therefore, control of the surface states is necessary to improve device performance in real-time applications. In this work, we investigated the effect of hydrogen plasma treatment on the optical properties of InGaN/GaN single-quantum-well (SQW) NRs. The low-temperature photoluminescence (PL) studies revealed that yellow and green emissions overlapped and the yellow band is more dominant in the pristine InGaN/GaN SQW NRs. However, the emission corresponding to yellow luminescence was strongly suppressed and the green emission is more intensified in hydrogenated InGaN/GaN SQW NRs. Furthermore, the time-resolved PL spectroscopy studies revealed that the carrier lifetimes of hydrogenated InGaN/GaN SQW NRs are relatively short compared to the pristine InGaN/GaN SQW, indicating the effective reduction of non-radiative centers. From the PEC measurement, the photocurrent density of hydrogenated InGaN/GaN SQW NRs in the H2 SO4 solution is found to be 5 mA cm −2 at −0.48 V versus reversible hydrogen electrode, which is 3.5-fold larger than that of pristine ones. These findings shed new light on the significance of surface treatment on the optical properties and thus nanostructured photoelectrodes for PEC applications.