In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(0 0 1)-4  ×  6 surface. (29th August 2018)

• Record Type: Journal Article
• Authors: Cheng, Chiu-Ping; Chen, Wan-Sin; Cheng, Yi-Ting; Wan, Hsien-Wen; Lin, Keng-Yung; Young, Lawrence Boyu; Yang, Cheng-Yeh; Pi, Tun-Wen; Kwo, Jueinai; Hong, Minghwei
• Is Part Of: Journal of physics. Volume 51:Number 40(2018)
• Publication Date: 2018-08-29
• Subjects: band offset -- interfacial dipole -- III–V semiconductor -- high κ dielectric oxide -- synchrotron radiation photoemission; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aada5a
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Using in situ synchrotron-radiation photoelectron spectroscopy, the band offsets and the surface dipole potential energy for cycle-by-cycle atomic layer deposited (ALD) Y2 O3 on p -type GaAs(0 0 1)-4 × 6 were studied. We have characterized the electronic property for laminar films. The valence- and conduction-band offsets and interfacial dipole potential energy are approximately 1.75, 2.4, and 0.46 eV, respectively. The dipole direction points outward, showing that Y(+) is located at the topmost layer and the O(−) ions participate in the bonding with the GaAs surface atoms.