Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation. (20th April 2020)

• Record Type: Journal Article
• Authors: Aonuki, Sho; Yamashita, Yudai; Sato, Takuma; Xu, Zhihao; Gotoh, Kazuhiro; Toko, Kaoru; Terai, Yoshikazu; Usami, Noritaka; Suemasu, Takashi
• Is Part Of: Applied physics express. Volume 13:Number 5(2020)
• Publication Date: 2020-04-20
• Subjects: solar cell -- photoresponsivity -- defects -- DLTS -- carrier lifetime -- Raman spectroscopy; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ab8725
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We grew 500-nm-thick lightly As-doped n-BaSi2 epitaxial films at 600 °C by molecular beam epitaxy, and supplied atomic H in durations ( t BaSi:H ) of 0–30 min, followed by capping with a 3-nm-thick amorphous Si layer at 180 °C. The photoresponsivity of the BaSi2 films was enhanced by approximately five times by As doping. Deep-level transient spectroscopy measurement revealed the disappearance of two previously reported electron traps. The photoresponsivity was further enhanced by approximately six times after H supply. It reached a maximum at t BaSi:H = 1–10 min, owing to the reduction of defects.