In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates. Issue 3 (20th August 2020)

• Record Type: Journal Article
• Authors: Lange, Felix; Ernst, Owen; Teubner, Thomas; Richter, Carsten; Schmidbauer, Martin; Skibitzki, Oliver; Schroeder, Thomas; Schmidt, Peer; Boeck, Torsten
• Is Part Of: Nano futures. Volume 4:Issue 3(2020)
• Publication Date: 2020-08-20
• Subjects: silicon -- germanium -- molecular beam epitaxy -- VLS growth mechanism -- nanowires -- in-plane -- patterned substrate; Nanoscience -- Periodicals; 620.5
• DOI: 10.1088/2399-1984/ab82a0
• Languages: English
• ISSNs: 2399-1984

Abstract

Abstract: Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 µ m −2 on the surrounding silicon oxide (SiO2 ). The initial growth of Ge NWs starting from Si–Au droplets with Six Ge1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55° inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.