The Kondo effect in 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures. (November 2019)

• Record Type: Journal Article
• Authors: Chumakov, N K; Chernykh, I A; Davydov, A B; Ezubchenko, I S; Grishchenko, Yu V; Lev, L L; Maiboroda, I O; Strocov, V N; Valeyev, V G; Zanaveskin, M L
• Is Part Of: Journal of physics. Volume 1389(2019)
• Publication Date: 2019-11
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1389/1/012019
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Unusual observation of the Kondo effect in two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures is reported. The temperature-dependent zero-field resistivity data exhibited an upturn below 120 K, while the standard low-temperature weak-localization behaviour was revealed at T → 0. Magnetotransport characterization was carried out in the magnetic fields up to 80 kOe, applied perpendicular to the 2DEG plane, in the temperature range 1.8 ÷ 300 K. Negative low-temperature magnetoresistance with a magnitude of order of 1 % was detected. The data set is analysed in the frame of the multichannel Kondo model for d0 -magnetic materials.