Fractional quantum Hall effect in CVD-grown graphene. (10th September 2020)

• Record Type: Journal Article
• Authors: Schmitz, M; Ouaj, T; Winter, Z; Rubi, K; Watanabe, K; Taniguchi, T; Zeitler, U; Beschoten, B; Stampfer, C
• Is Part Of: 2D materials. Volume 7:Number 4(2020)
• Publication Date: 2020-09-10
• Subjects: graphene -- fractional quantum Hall effect -- CVD -- magneto-transport -- electronic properties; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/abae7b
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: We show the emergence of fractional quantum Hall states in graphene grown by chemical vapor deposition (CVD) for magnetic fields from below 3 T to 35 T where the CVD-graphene was dry-transferred. Effective composite-fermion filling factors up to ν * = 4 are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the p /3 fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.