Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates. (25th April 2018)

• Record Type: Journal Article
• Authors: Huang, Jijie; Chen, Li; Li, Leigang; Qi, Zhimin; Sun, Xing; Zhang, Xinghang; Wang, Haiyan
• Is Part Of: Journal of physics. Volume 51:Number 20(2018)
• Publication Date: 2018-04-25
• Subjects: iron chalcogenide -- superconducting thin film -- Si-based substrate; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aabc70
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: With the goal of integrating superconducting iron chalcogenides with Si-based electronics, superconducting FeSe0.1 Te0.9 thin films were directly deposited on Si and SiOx /Si substrates without any buffer layer by a pulsed laser deposition (PLD) method. Microstructural characterization showed excellent film quality with mostly c -axis growth on both types of substrates. Superconducting properties (such as superconducting transition temperature T c and upper critical field H c 2 ) were measured to be comparable to that of the films on single crystal oxide substrates. The work demonstrates the feasibility of integrating superconducting iron chalcogenide (FeSe0.1 Te0.9 ) thin films with Si-based microelectronics.