Cite
HARVARD Citation
Ma, P. et al. (2020). Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. Semiconductor science and technology. p. . [Online].
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Ma, P. et al. (2020). Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel. Semiconductor science and technology. p. . [Online].