Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy. (4th March 2020)

• Record Type: Journal Article
• Authors: Sakanashi, Kohei; Ouchi, Hidemitsu; Kamiya, Kota; Krüger, Peter; Miyamoto, Katsuhiko; Omatsu, Takashige; Ueno, Keiji; Watanabe, Kenji; Taniguchi, Takashi; Bird, Jonathan P; Aoki, Nobuyuki
• Is Part Of: Nanotechnology. Volume 31:Number 20(2020)
• Publication Date: 2020-03-04
• Subjects: molybdenum ditelluride -- Ohmic contact -- scanning gate microscopy -- laser irradiation -- phase transition; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab71b8
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Although semiconductor to metal phase transformation of MoTe2 by high-density laser irradiation of more than 0.3 MW cm −2 has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T′ structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe2 . The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe2 /LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe2 boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe2 /LIM phase junction for both n- and p-type carriers.