Conduction and switching mechanism in Nb2O5 thin films based resistive switches. (8th November 2016)

• Record Type: Journal Article
• Authors: Deswal, Sweety; Jain, Ashish; Borkar, Hitesh; Kumar, Ashok; Kumar, Ajeet
• Is Part Of: Europhysics letters. Volume 116:Number 1(2016:Oct.)
• Publication Date: 2016-11-08
• Subjects: 73.40.Rw -- 77.80.Fm; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1209/0295-5075/116/17003
• Languages: English
• ISSNs: 0295-5075

Abstract

Abstract: We report unipolar resistive switching of Pt/Nb2 O5 /Al device with orthorhombic crystalline phase prepared by reactive sputtering method. It showed non-volatile reproducible unipolar switching with ON/OFF resistance ratio of 10 3 or higher. The range of SET and RESET voltage was 1.0–2.0 V and 0.3–0.8 V, respectively, depending on devices and their dimension. The charge carriers followed Ohmic and space-charge–limited conduction (SCLC) behaviour in low-resistance state (LRS) and high-resistance state (HRS), respectively. An impedance spectroscopy analysis as well as a drift and diffusion of oxygen ion vacancy model are presented to explain the conducting filament formation and its rupture during the SET and RESET processes.