Cite
HARVARD Citation
Chang, H. et al. (2018). Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors. Journal of physics. p. . [Online].
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Chang, H. et al. (2018). Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors. Journal of physics. p. . [Online].