TCAD silicon device simulation for high level of radiation damage. (26th May 2020)

Record Type:: Journal Article
Title:: TCAD silicon device simulation for high level of radiation damage. (26th May 2020)
Main Title:: TCAD silicon device simulation for high level of radiation damage
Authors:: Agrawal, N.
Androsov, K.
Bhardwaj, A.
Ciocci, M.A.
Grippo, M.T.
Jain, C.
Kumar, A.
Messineo, A.
Parolia, S.
Ranjan, K.
Saumya, S.
Sisodia, A.
Sondh, S.
Abstract:
Is Part Of:: Journal of instrumentation. Volume 15:Number 5(2020)
Journal:: Journal of instrumentation
Issue:: Volume 15:Number 5(2020)
Issue Display:: Volume 15, Issue 5 (2020)
Year:: 2020
Volume:: 15
Issue:: 5
Issue Sort Value:: 2020-0015-0005-0000
Page Start:: C05066
Page End:: C05066
Publication Date:: 2020-05-26
Subjects:: Scientific apparatus and instruments -- Periodicals
502.84
Journal URLs:: http://iopscience.iop.org/1748-0221 ↗
http://ioppublishing.org/ ↗
DOI:: 10.1088/1748-0221/15/05/C05066 ↗
Languages:: English
ISSNs:: 1748-0221
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 14081.xml