Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach. (2nd April 2020)

• Record Type: Journal Article
• Authors: Aldana, S; García-Fernández, P; Romero-Zaliz, R; González, M B; Jiménez-Molinos, F; Gómez-Campos, F; Campabadal, F; Roldán, J B
• Is Part Of: Journal of physics. Volume 53:Number 22(2020)
• Publication Date: 2020-04-02
• Subjects: resistive switching memory -- RRAM variability -- valence change memories -- simulation tools -- conductive filaments -- kinetic Monte Carlo; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ab7bb6
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: A simulation study has been performed to analyze resistive switching (RS) phenomena in valence change memories (VCM) based on a HfO2 dielectric. The kernel of the simulation tool consists of a 3D kinetic Monte Carlo (kMC) algorithm implemented self-consistently with the 3D Poisson and heat equations. These VCM devices show filamentary conduction, their RS operation is based on the destruction and regeneration of an ohmic conductive filament (CF) composed of oxygen vacancies. The physics underlying the RS operation is described by means of processes linked to generation of oxygen vacancies, oxygen ion migration and recombination between vacancies and oxygen ions that can be accurately described by using the electric field and temperature distributions in the dielectric. The studied devices consist of TiN/Ti/HfO2 /W stacks where the Ti capping layer plays the role of oxygen ion getter material. The simulation tool is useful for obtaining information of internal physical variables, explaining RS dynamics and the CFs evolution from the microscopic viewpoint in terms of their size and shape under different electrical input signals; particularly, the pulsed operation regime has been studied in depth. Furthermore, interesting phenomena, such as partial SETs within overall RESET processes can be accurately reproduced.