Impedance measurements in undoped and doped regioregular poly(3-hexylthiophene). (24th March 2020)

• Record Type: Journal Article
• Authors: Mandal, Sougata; Menon, Reghu
• Is Part Of: Journal of physics. Volume 53:Number 21(2020)
• Publication Date: 2020-03-24
• Subjects: poly(3-hexylthiophene) -- impedance spectroscopy -- Nyquist plot -- doping; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ab7959
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The semiconducting properties of regioregular poly(3-hexylthiophene) are characterized by impedance measurements, from 40 Hz to 100 MHz. X-ray diffraction shows the presence of both ordered and disordered regions. The analysis of impedance data by Nyquist plots show two semi-circular arcs, and their size is reduced by dc bias. Also, the carrier variation by light and chemical doping alters the shape and size of arcs. The fits to the data and equivalent circuits show considerable changes in the resistive, capacitive and constant-phase element parameters as the carrier density increases. The increase in carrier density reduces the relaxation time in ordered regions, and it does not alter much in disordered regions.