High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions. (1st November 2018)

• Record Type: Journal Article
• Authors: Choukroun, Jean; Pala, Marco; Fang, Shiang; Kaxiras, Efthimios; Dollfus, Philippe
• Is Part Of: Nanotechnology. Volume 30:Number 2(2019)
• Publication Date: 2018-11-01
• Subjects: TFET -- transition metal dichalcogenides -- steep-slope -- NEGF -- tight-binding -- quantum simulation -- MoS2; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aae7df
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe2 -MoS2 and MoTe2 -MoS2 . The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (<5 mV/decade) and I ON / I OFF ratios higher than 10 8 at a supply voltage of 0.3 V, making them ideal for ultra-low power consumption.