Tunable dual emission in Mn2+-doped CsPbX3 (X = Cl, Br) quantum dots for high efficiency white light-emitting diodes. (18th December 2018)

• Record Type: Journal Article
• Authors: Chen, Weiwei; Tang, Xiaosheng; Zang, Zhigang; Shi, Yue; Yang, Zhaoqi; Du, Juan
• Is Part Of: Nanotechnology. Volume 30:Number 7(2019)
• Publication Date: 2018-12-18
• Subjects: perovskite -- Mn-doping -- quantum dots -- light-emitting device; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aaf299
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Doping of Mn 2+ into semiconductor nanocrystals has been demonstrated to endow them with novel electronic, optical and magnetic functionalities. In this paper, Mn-doped CsPbX3 (X = Br, Cl) quantum dots (QDs) were synthesized at room temperature via a facile strategy by introducing dimethyl sulfoxide (DMSO)-MnBr2 /PbX2 composite as a precursor. The excitonic emission spectra of the as-obtained Mn-doped CsPbX3 QDs can be tuned from 517 nm to 418 nm by adjusting the ratio of PbBr2 /PbCl2 precisely, and the luminescence mechanism of the doped QDs is discussed in detail. Moreover, the highest photoluminescence quantum yield of the Mn 2+ emission achieves 36.7%, which is comparable with QDs prepared by the conventional hot-injection method. Depending on the ratios of PbPb2 /PbCl2, the energy transfer rate from the band-edge to Mn 2+ excited state is in the range of 0.006–20.42 × 10 7 s −1 . Furthermore, white light-emitting diodes (LEDs) were successfully fabricated by combining the as-prepared Mn-doped CsPbX3 QDs with commercial UV GaN chips, and the high luminous efficiency of the as-prepared white LEDs was developed to 55.9 lm W −1 . This work strongly supports the fact that Mn-doped CsPbX3 QDs are promising materials for application in lighting and displaying fields.