Microstructure and high temperature oxidation resistance of mixed long Si3N4 nanowires with wide diameter distribution. (8th January 2020)

• Record Type: Journal Article
• Authors: Yang, Feiyue; Zhao, Shuang; Yang, Zichun; Chen, Guobing; Li, Kunfeng; Yuan, Shuowei
• Is Part Of: Materials research express. Volume 6:Number 12(2019)
• Publication Date: 2020-01-08
• Subjects: Si3N4 nanowires -- diameter differences -- microstructure -- high temperature oxidation; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab51d8
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Herein, the mixed α -Si3 N4 nanowires with large diameter differences (35–400 nm) were prepared by repeated re-filling of nitrogen gas during high temperature nitridation, and the length thereof was substantially above 500 μ m (the longest length even could reach centimeter level). And there were significant differences in the interplanar spacing and growth direction of α-Si3 N4 nanowires with different diameters. Moreover, the high temperature oxidation resistance of nanowires were systematically analyzed and obtained the following results: the oxidation reaction of Si3 N4 nanowires became intensified significantly at about 1100 °C, and the diffraction intensity of Si3 N4 in XRD patterns decreased with the increase of oxidation temperature until it was substantially oxidized to SiO2 at about 1400 °C; and the changes in the microstructure of Si3 N4 nanowires became more intense as the oxidation temperature increased until a significant shrinkage occurred at about 1400 °C, at which point it no longer exhibited a distinct nanowire morphology. The above studies may provide a reference for the further research and application of α -Si3 N4 nanowires in the high temperature field.