The model for in-plane and out-of-plane growth regimes of semiconductor nanowires. (December 2019)

• Record Type: Journal Article
• Authors: Berdnikov, Y; Sibirev, N V; Reznik, R R; Redkov, A V
• Is Part Of: Journal of physics. Volume 1410(2019)
• Publication Date: 2019-12
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1410/1/012049
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: In this work we present the model capable of prediction whether the vapor-liquid-solid growth would preferably result in the formation of in-plane (horizontal) or out-of-plane (vertical or inclined) nanowires. Within the model, we analyze the particular case of gold-catalyzed germanium nanowire growth on Ge(111), Ge(110) and Si(100) substrates. We focus on two aspects of the growth process: detachment of the catalyst from the substrate and stabilization of horizontal growth by nucleation at the nanowire-substrate-liquid line.