Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces. (13th March 2020)

• Record Type: Journal Article
• Authors: Hara, Masahiro; Asada, Satoshi; Maeda, Takuya; Kimoto, Tsunenobu
• Is Part Of: Applied physics express. Volume 13:Number 4(2020)
• Publication Date: 2020-03-13
• Subjects: SiC -- Schottky barrier diodes -- barrier height -- image force lowering -- thermionic field emission; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ab7bcd
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We investigated the doping concentration dependence of the barrier height and forward carrier transport mechanism in Ni/SiC Schottky barrier diodes (SBDs) in the wide range of 6.8 × 10 15 – 1.8 × 10 19 cm − 3 . Forward current–voltage characteristics in heavily-doped SiC SBDs ( > 2.6 × 10 17 cm − 3 ) can be well reproduced by a thermionic field emission model. The barrier height decreased with increasing doping concentration and the barrier height drop in the most heavily-doped SBD ( 1.8 × 10 19 cm − 3 ) was about 0.2 eV, which quantitatively agreed with the image force lowering of 0.18 eV caused by the high electric field.