Temperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with δ-doping active region. (December 2019)

• Record Type: Journal Article
• Authors: Rochas, S S; Novikov, I I; Gladyshev, A G; Kolodeznyi, E S; Maximov, M V; Zubov, F I; Shernyakov, Yu M; Karachinsky, L Ya; Zhukov, A E; Denisov, D V; Egorov, A Yu
• Is Part Of: Journal of physics. Volume 1410(2019)
• Publication Date: 2019-12
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/1410/1/012104
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The optical gain performance of 1530-1565 nm laser diodes with active regions containing p-doped barrier layers has been investigated. We have studied the threshold current density and differential quantum efficiency in wide temperature range and compared modal gain behaviour of laser diodes made of heterostructure with delta-doped barrier layers by carbon at level of 10 12 cm -2 and heterostructure with undoped barrier layers.