Cite
HARVARD Citation
Tikhomirov, V. et al. (2019). Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation. Journal of physics. p. . [Online].
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Tikhomirov, V. et al. (2019). Increasing efficiency of GaN HEMT transistors in equipment for radiometry using numerical simulation. Journal of physics. p. . [Online].