P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition. (3rd July 2020)

• Record Type: Journal Article
• Authors: Nakanishi, Subaru; Shinozaki, Yoshiharu; Kaneko, Satoru; Matsuda, Akifumi; Yoshimoto, Mamoru
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 7(2020)
• Publication Date: 2020-07-03
• Subjects: vanadium oxide -- amorphous thin film -- p-type semiconductor -- thermoelectric property -- pulsed laser deposition; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ab9ef7
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Amorphous vanadium oxide (V x O y ) thin films were grown on SiO2 glass substrates by pulsed laser deposition at RT in high vacuum of 1.0 × 10 −5 Pa. The electric conductivity of the film was increased from 0.34 S cm −1 at 323 K to 4.2 S cm −1 at 473 K, and the film showed positive Seebeck coefficient of 15 μ V K −1 at 323 K and positive Hall voltage of 10 μ V at RT, indicating p-type semiconductor. From ex situ X-ray photoelectron spectroscopy analysis, p-type amorphous V x O y thin films seemed to contain minor V 4+ ions with a V 4+ /V 5+ ratio of at least 0.2 at the surface.