An Artificial Bio-Synapse Based on Ag/a-Si:Ag/a-Si/X Memristors With Different Bottom Electrode X. Issue 4 (December 2018)

• Record Type: Journal Article
• Authors: Chen, Yicheng; Li, Dongyang; Liu, Cheng; Jiang, Xiangdong; Li, Wei
• Is Part Of: IOP conference series. Volume 452:Issue 4(2018)
• Publication Date: 2018-12
• Subjects: Materials science -- Periodicals; 620.1105
• DOI: 10.1088/1757-899X/452/4/042160
• Languages: English
• ISSNs: 1757-8981

Abstract

Abstract: In this paper, memristors with three different bottom electrodes as p-Si, Ag and ITO have been fabricated successfully. The memristor is designed as Ag/a-Si:Ag/a-Si/X, in which X refers to p-Si, Ag or ITO. The dielectric layers of a-Si:Ag/a-Si are fabricated by co-sputtering and the final device is completed by standard MEMS processes. The I-V curves, voltage sweeps and response currents, short-term memory (STM) to long-term memory (LTM), and the stability of memristors are studied extensively to mimic the synaptic behavior. It is indicated that the bottom electrode of the Ag/a-Si:Ag/a-Si/X memristors has an obviously influence on the performance of the decivce, and it is suggested that an optimized structural design is needed when a memristive layer is already chosen.