Observation of domain wall creation and propagation using the magnetic fixed region with a synthetic antiferromagnetic configuration. (25th June 2020)

• Record Type: Journal Article
• Authors: Ashida, Takuya; Shibata, Tatsuo; Shinohara, Tetsuhito; Ohta, Minoru; Yamada, Shogo; Terasaki, Yukio; Sasaki, Tomoyuki
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 7(2020)
• Publication Date: 2020-06-25
• Subjects: Domain wall -- Tunneling magnetic junction -- Magnetic fixed layer; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ab9adf
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Spin-memristors using a magnetic domain wall (DW) have drawn attention as possible candidates for an essential element of the analogue neuromorphic device. In this study, we fabricated a DW type three-terminal magnetic tunneling junction element with a magnetic fixed region having a synthetic antiferromagnetic configuration. The DW creation and subsequent measurement of current-induced domain wall motion were investigated. The magnetic DW was successfully introduced through a simple operation using the magnetic fixed region as a DW injector. This element structure will be one of the key technologies for realizing an array level production of the spin-memristor.