Growth, optical and scintillation properties of Gd3+ doped Bi4Si3O12 single crystals. (24th April 2020)

• Record Type: Journal Article
• Authors: Xiao, Xuefeng; Xu, Jiayue; Zhang, Xuefeng
• Is Part Of: Japanese journal of applied physics. Volume 59:Number 5(2020)
• Publication Date: 2020-04-24
• Subjects: BSO crystals -- vertical Bridgeman method -- scintillation properties -- relative light yield; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ab87db
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Pure Bi4 Si3 O12 (BSO) and Bi4 Si3 O12 :Gd (BSO:Gd) crystals with nominal concentrate of 1.0–6.0 mol% Gd2 O3 were grown by the modified vertical Bridgman method. The X-ray powder diffraction, transmission and fluorescence spectra have been investigated on BSO:Gd crystals. Scintillation properties of Gd 3+ doped Bi4 Si3 O12 single crystals have been investigated. Doped with small amount of Gd2 O3 (1.0–6.0 mol%), the relative light yield and energy resolution of BSO crystals were improved significantly. The experimental data indicates that the sensitization effect of a small amount of Gd 3+ doping enables the intrinsic defects reduce, and improve the light yield and a large amount of Gd 3+ doping can cause the new crystal field distortion and further affect the intrinsic luminescence of Bi 3+ . These results indicate that BSO:Gd crystals could be one of the promising candidates for replacing BGO in some applications such as electromagnetic calorimeter and dual readout in nuclear or high energy physics.