Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability. (8th April 2019)

• Record Type: Journal Article
• Authors: Wang, Lezhi; Shi, Kewen; Peng, Shouzhong; Cao, Kaihua; Yang, Huaiwen; Gao, Jianfeng; Zhao, Weisheng; Zhao, Chao
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 5(2019)
• Publication Date: 2019-04-08
• Subjects: back-end-of-line process -- spin orbit torque effect -- MRAM -- β phase tungsten -- spin hall angle -- high thermal stability; Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab0e32
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We report a robust perpendicularly magnetized β -W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin–orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.