Cite
HARVARD Citation
Woo, W. et al. (2019). Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition. 2D materials. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Woo, W. et al. (2019). Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition. 2D materials. p. . [Online].