An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface. (13th March 2020)

• Record Type: Journal Article
• Authors: Gandrothula, Srinivas; Kamikawa, Takeshi; Araki, Masahiro; Cohen, Daniel; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.
• Is Part Of: Applied physics express. Volume 13:Number 4(2020)
• Publication Date: 2020-03-13
• Subjects: GaN -- Recycle -- ELO -- semi-polar planes; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ab7bc9
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrate removal of homoepitaxially grown semi-polar gallium nitride (GaN) layers from the native substrates. The weak link at the interface of the epitaxial lateral overgrowth and cleavable m -plane of the respective native semi-polar plane is used to separate homoepitaxial GaN from its native substrate. Homoepitaxial GaN layers of the semi-polar planes, (10 1 ̄ 1), (20 2 ̄ 1), (30 3 ̄ 1), (10 1 ̄ 1 ̄ ), (20 2 ̄ 1 ̄ ), and (30 3 ̄ 1 ̄ ) are successfully removed. This approach allows the reuse of expensive semi-polar GaN substrates, eliminating one barrier to market introduction of superior optoelectronic devices grown with semi-polar orientations.