P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product. (August 2020)

• Record Type: Journal Article
• Authors: Jiang, Z.X.; Wu, Z.Y.; Ma, C.C.; Deng, J.N.; Zhang, H.; Xu, Y.; Ye, J.D.; Fang, Z.L.; Zhang, G.Q.; Kang, J.Y.; Zhang, T.-Y.
• Is Part Of: Materials today physics. Volume 14(2020)
• Publication Date: 2020-08
• Subjects: P-type electrical properties -- Solar-blind photodetector -- Photoresponsivity and detectivity -- Noise and gain-bandwidth product -- Exciton; Materials science -- Periodicals; Physics -- Periodicals; Electronic journals; 530.41
• DOI: 10.1016/j.mtphys.2020.100226
• Languages: English
• ISSNs: 2542-5293

Abstract

Abstract: P-type β-Ga2 O3 films deep-ultraviolet (DUV) solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) are fabricated with extremely high photoresponsivity (9.5 × 10 3 A/W), external quantum efficiency (4.7 × 10 6 %), detectivity (1.5 × 10 15 Jones), and gain-bandwidth product (10 6 ) at 5 V bias, very low noise equivalent power (4.9 × 10 −16 W/Hz 1/2 ) and high specific detectivity (1.9 × 10 13 Jones) at 1 kHz and 3 V bias. The excellent performances of the p-type β-Ga2 O3 DUV MSM PDs are attributed to the charge carrier multiplication via collective excitation of aggregated excitons and/or electron-hole liquid within the fabricated high-quality p-type β-Ga2 O3 films, which possess the room-temperature Hall resistivity of 52.6 Ωcm, the hole mobility of 41.4 cm 2 /V⋅s, and the hole concentration of 2.86 × 10 15 cm −3 . The unprecedentedly high photoresponsivity and detectivity and the carrier multiplication mechanism in high-quality p-type β-Ga2 O3 films pave a novel way to fabricate super sensitive DUV PDs based on p-type wide-bandgap oxide semiconductors. Graphical abstract: Image 1 Highlights: High-quality p-type N-doped β-Ga2 O3 films are obtained. Extremely high performance solar-blind photodetectors are fabricated. Extremely high photoresponsivity via collective excitation of excitons. Pave a novel way to fabricate super sensitive oxide semiconductor photodetectors. Advance applications of p-type β-Ga2 O3 optoelectronic and power devices.