A tunable low noise high PSRR high accuracy bandgap reference using stacked-long cascode technique in 14 ​nm FinFET process. (September 2020)

• Record Type: Journal Article
• Authors: Li, Qiuliang; Wu, Lei; Liu, Ran; Liu, Yi
• Is Part Of: Microelectronics journal. Volume 103(2020)
• Publication Date: 2020-09
• Subjects: Trim -- Chopping -- DEM -- Stack-long cascode -- Current mirror -- FinFET circuit -- Sub-1v -- Tunable -- PSRR -- Noise; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2020.104825
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: A tunable CMOS bandgap reference circuit is presented. To improve the match performance of the current mirror, the proposed bandgap is realized with stacked-long Cascode technique. A detailed analysis of various error sources is provided and the techniques to reduce them are discussed. The bandgap reference with an accuracy of ±1.2% from −40 ​°C to 125 ​°C draws 57μA from a 1.8 ​V supply, and occupied 0.0036 ​mm 2 in a 14 ​nm FinFET Process. The output noise is 0.76μV (rms) and the PSRR is −115dB@DC.