High‐Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod–Coil Materials as a Floating Gate. Issue 36 (23rd July 2020)

• Record Type: Journal Article
• Authors: Chiang, Yun‐Chi; Hung, Chih‐Chien; Lin, Yan‐Cheng; Chiu, Yu‐Cheng; Isono, Takuya; Satoh, Toshifumi; Chen, Wen‐Chang
• Is Part Of: Advanced materials. Volume 32:Issue 36(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-07-23
• Subjects: floating‐gate photomemory -- multilevel memory -- photonic transistors -- rod–coil materials; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202002638
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: A novel approach for using conjugated rod–coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n‐type Sol‐PDI and p‐type C10‐DNTT, is presented. Sol‐PDI and C10‐DNTT are used as dual functions of charge‐trapping (conjugated rod) and tunneling (insulating coil), while n‐type BPE‐PDI and p‐type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self‐assembled structure, both n‐type and p‐type memory devices exhibit a fast response, a high current contrast between "Photo‐On" and "Electrical‐Off" bistable states over 10 5, and an extremely low programing driving force of 0.1 V. The fabricated photon‐driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light‐recorder and synaptic device applications. Abstract : High‐performance photonic transistor memory devices are fabricated using conjugated rod–coil materials as a photoactive floating gate, in which the conjugated rods and side‐chain coils act as charge‐trapping and tunneling moieties, respectively. By inheriting their self‐assembled structure, both n‐type and p‐type memory devices exhibit a fast response, a current contrast over 10 5, and an extremely low programing driving force of 0.1 V.