Thermoelectric transport and microstructural study of Cu doped Mg2Si0.4Sn0.6. (2020)

• Record Type: Journal Article
• Authors: Howlader, Smita; Gupta, Suniksha; Vasudevan, R.; Banerjee, M.K.; Sachdev, K.
• Is Part Of: Materials today. Volume 30:Part 1(2020)
• Page Start: 100
• Page End: 103
• Publication Date: 2020
• Subjects: Mg2Si0.4Sn0.6 -- Cu doped -- High energy ball milling -- Thermoelectric properties -- Microstrural properies; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2020.04.668
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: The Mg2 X (X = Si and Sn) based alloys which are composed of abundant, non-toxic and inexpensive elements are promising mid-temperature thermoelectric (TE) materials. Herein, we report synthesis of Mg2 Si0.4 Sn0.6 by high energy ball milling followed by hot pressing for thermoelectric application. The use of Cu as a dopant, appears to provide p-type conductivity but experimentally, the system has been found to generate n-type conduction. The XRD investigations revealed successful attainment of a near to single phase alloy with only minute presence of elemental Si. Electrical conductivity of the order of 10 4 S/m and charge carrier concentration of the order of 10 19 cm −3 have been obtained through ZEM and Hall coefficient measuring equipment respectively. LFA provides thermal conductivity in the range of 4.4 – 3.0 W/mK. In addition to the thermoelectric measurements, the elemental mapping of the hot-pressed sample has been carefully explored.