Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation. (October 2020)

• Record Type: Journal Article
• Authors: Chen, Yi-Ju; Liao, Hsiu-Hsien; Tsui, Bing-Yue; Lee, Yao-Jen; Wang, Chih-Jen; Sung, Po-Jung
• Is Part Of: Vacuum. Volume 180(2020)
• Publication Date: 2020-10
• Subjects: Germanium -- Ion implantation -- Junction -- Plasma immersion ion implantation; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2020.109528
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Ge n + /p junctions fabricated by conventional ion implantation (CII) and plasma immersion ion implantation (PIII) are compared in this work. To achieve low junction leakage current, PIII-implanted Ge n + /p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current, which may be contributed to the residual hydrogen and hydrogen-related defects. It is demonstrated that with 500 °C annealing, well-behaved Ge n + /p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 °C annealing, best Ge n + /p junction performance with current on/off ratio ~9 × 10 5 and ideality factor ~1.07 is achieved by PIII. Highlights: Ge n + /p junctions fabricated by conventional ion implantation and plasma immersion ion implantation (PIII) are compared. The effect of hydrogen atoms on Ge n + /p junction performance is studied. With 500 °C annealing, well-behaved Ge n + /p junction with ultra-shallow junction depth (<50 nm) can be achieved by PIII. With 600 °C annealing, Ge n + /p junction with current on/off ratio ~9 × 10 5 and ideality factor ~1.07 is achieved by PIII. PIII-implanted Ge n + /p junctions require higher annealing temperature to eliminate the Shockley-Read-Hall generation current.