Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure. Issue 34 (21st July 2020)

• Record Type: Journal Article
• Authors: Pan, Lei; Grutter, Alexander; Zhang, Peng; Che, Xiaoyu; Nozaki, Tomohiro; Stern, Alex; Street, Mike; Zhang, Bing; Casas, Brian; He, Qing Lin; Choi, Eun Sang; Disseler, Steven M.; Gilbert, Dustin A.; Yin, Gen; Shao, Qiming; Deng, Peng; Wu, Yingying; Liu, Xiaoyang; Kou, Xufeng; Masashi, Sahashi; Han, Xiaodong; Binek, Christian; Chambers, Scott; Xia, Jing; Wang, Kang L.
• Is Part Of: Advanced materials. Volume 32:Issue 34(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-07-21
• Subjects: antiferromagnet -- quantum anomalous Hall effect -- topological insulators; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202001460
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract: Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically‐doped topological insulator grown on the antiferromagnetic insulator Cr2 O3 . The exchange coupling between the two materials is investigated using field‐cooling‐dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr2 O3 and the magnetic topological insulator, manifested as an exchange bias when the sample is field‐cooled under an out‐of‐plane magnetic field, and an exchange spring‐like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films. Abstract : The quantum anomalous Hall effect is observed in a magnetic topological insulator/antiferromagnetic chromium oxide heterostructure. In the same material system, magnetic coupling is confirmed between the two thin films based on the observation of the exchange bias effect and polarized neutron reflectometry results.